Simulation of Semiconductor Processes and Devices 2001: SISPAD 01

Front Matter....Pages i-xv
Macroscopic Quantum Carrier Transport Modeling....Pages 1-9
Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication....Pages 10-17
Monte Carlo Impurity Diffusion Simulation Considering Charged Species....Pages 18-21
A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism....Pages 22-25
The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization....Pages 26-29
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon....Pages 30-33
Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach....Pages 34-37
Local Iterative Monte Carlo investigation of the influence of electron-electron scattering on short channel Si-MOSFETs....Pages 38-41
Simplified Inelastic Acoustic—Phonon Hole Scattering Model for Silicon....Pages 42-45
An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects....Pages 46-49
Density of States and Group Velocity Calculations for SiO 2 ....Pages 50-53
Investigation of Spurious Velocity Overshoot Using Monte Carlo Data....Pages 54-57
Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses in Advanced Silicon Technologies....Pages 58-61
A Unified Model of Dopant Diffusion in SiGe.....Pages 62-65
A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si 1-x Ge x by Carbon Insertion....Pages 66-69
On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets....Pages 70-73
Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi 2 ....Pages 74-77
Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs....Pages 78-81
Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential....Pages 82-85
Finite Element Simulation of 2d Quantum Effects In Ultra Short Channel Mosfets With High-K Dielectric Gates....Pages 86-89
Decananometer Fdsoi Device Optimization Including Random Variation....Pages 90-93
Fully 2d Quantum-Mechanical Simulation of Nanoscale Mosfets....Pages 94-97
Ab-initio Electrodynamic Modeling of On-Chip Back-End Structures....Pages 98-107
Analysis of Hot-Carrier-Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo Simulation....Pages 108-115
Acceleration of Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High Concentrations....Pages 116-119
Interstitial Cluster Evolution and Transient Phenomena in Si-crystal....Pages 120-123
Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD....Pages 124-127
Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor....Pages 128-131
Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si-thin films by Nanosecond-Pulse Excimer Lasers....Pages 132-135
2d Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources....Pages 136-139
Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation....Pages 140-143
Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation....Pages 144-147
Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET....Pages 148-151
Boundary Condition Models for Terminal Current Fluctuations....Pages 152-155
Electron Velocity in Sub-50-Nm Channel Mosfets....Pages 156-161
3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER....Pages 162-169
Modeling of Reactive Ion Etching for Si/Si0 2 Systems....Pages 170-173
Simulation and Prediction of Aspect Ratio Dependent Phenomena during Si0 2 and Si Feature Etching in Fluorocarbon Plasmas....Pages 174-177
System Level Modeling of an Electrostatic Torsional Actuator....Pages 178-181
Impact of Substrate Resistance on Drain Current Noise in MOSFETs....Pages 182-185
An Efficient Frequency-Domain Analysis Technique of MOSFET Operation....Pages 186-189
Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs....Pages 190-193
Compact MOS Modelling for RF CMOS Circuit Simulation....Pages 194-201
Statistical Analysis of VLSI Using TCAD....Pages 202-209
Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in Gaas Mesfets....Pages 210-213
Monte Carlo Simulation of Multi-band Carrier Transport in Semiconductor Materials with Complex Unit Cells....Pages 214-217
Modeling Semiconductor Carbon Nanotube Rectifying Heterojunctions....Pages 218-221
Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model....Pages 222-225
A Computational Efficient Method For Hbt Intermodulation Distortions And Two-Tone Characteristics Simulation....Pages 226-229
Modeling the Impact of Body-to-body Leakage in Partially-Depleted SOI CMOS Technology....Pages 230-233
Compact device model for partially depletedSOI-MOSFETs....Pages 234-237
Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully-Depleted SOI MOSFET’s....Pages 238-241
3D Thermal Analysis for SOI and its impact on Circuit Performance....Pages 242-245
Modelling of High-Voltage SOI-LDMOS Transistors including Self-Heating....Pages 246-249
An Efficient Tool for Extraction of Interconnect Models in Submicron Layouts....Pages 250-253
A Comparative Study Of Two Numerical Techniques For Inductance Calculation In Interconnect Structures....Pages 254-257
Comparison of finite element stress simulation with X-ray measurement for the aluminum conductors with different passivation topography....Pages 258-261
A New Compact Spice-like Model of E 2 PROM Memory Cells Suitable for DC and Transient Simulations....Pages 262-265
Simulation of Flash Memory Programming Characteristics....Pages 266-269
A Figure of Merit for Flash Memory Multi-Layer Tunnel Dielectrics....Pages 270-273
Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs....Pages 274-277
Neutron-Ser Modeling & Simulation for 0.181,1,M Cmos Technology....Pages 278-283
Tcad Driven Process Design of 0.15μm Fully-Depleted Soi Transistor for Low Power Applications....Pages 284-287
A Simulation Evaluation of 100nm CMOS Device Performance....Pages 288-291
A Practical Approach to Modeling Strained Silicon NMOS Devices....Pages 292-295
Accounting for Quantum Effects and Polysilicon Depletion in an Analytical Design-Oriented MOSFET Model....Pages 296-299
Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation....Pages 300-303
Bipolar Transistor’s Intrinsic and Extrinsic Capacitance Determination....Pages 304-307
Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width....Pages 308-311
Ensemble Monte Carlo Particle Modeling of IngaAs/InP Uni-Traveling-Carrier Photodiodes....Pages 312-315
An Effective Methodology for Predicting the Distribution of MOSFET Device Characteristics Using Statistical TCAD Simulations....Pages 316-319
Quantum mechanical balance equations for modeling transport in closed electric circuits.....Pages 320-323
A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation....Pages 324-327
The modeling of a SOI microelectromechanical sensor....Pages 328-331
A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures....Pages 332-335
A Full-Wave Analysis for Multi-Level Interconnects Using FDTD-PML method....Pages 336-339
Differences Between Quantum-Mechanical Capacitance-Voltage Simulators....Pages 340-343
Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity....Pages 344-347
A Shared Architecture for a Dynamic TechnologySimulation Repository....Pages 348-351
Level Set Modeling of Profile Evolution During Deposition Process....Pages 352-355
Parameter and Coupling Ratio Extraction for SPICE-Compatible MACRO Modeling of Source Side Injection (SSI) Flash Cell....Pages 356-359
Theoretical Calculation of a Charged Particle Detector’s Response Fabricated by Semi Insulating (SI) GaAs....Pages 360-363
Stress Modelling of Multi Level Interconnect Schemes For Future Deep Submicron Device Generations....Pages 364-367
Robust Method for Fast and Accurate Simulation of Random Dopant Fluctuation-Induced Vth Variation in MOSFETs with Arbitrary Complex Doping Distribution....Pages 368-371
An Agent-based Common Software Platform Applied to Multi-scale Device and Process Simulations....Pages 372-375
Simulation of Dark Count in Geiger Mode Avalanche Photodiodes....Pages 376-379
Device Simulation and Measurement of Hybrid SBTT....Pages 380-383
Two-Dimensional Diffusion Characterization of Boron in Silicon using Reverse Modeling....Pages 384-387
Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics....Pages 388-391
Model of Pocket-Implant Mosfets for Circuit Simulation....Pages 392-395
Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics....Pages 396-399
Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator....Pages 400-403
Electron Beam Lithography Simulation for Subquartermicron and High Density Patterns....Pages 404-407
Green’s Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications....Pages 408-411
Analysis of Ultra Short MOSFETs with High-k Gate Dielectrics....Pages 412-415
TCAD Analysis of Gain Cell Retention Time for SRAM Applications....Pages 416-419
Optimization for TCAD Purposes Using Bernstein Polynomials....Pages 420-423
Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation....Pages 424-427
A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization....Pages 428-431
A Review of Modeling Issues for RF Heterostructure Device Simulation....Pages 432-435
Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High Voltage Power Devices....Pages 436-439
Determination of the Radiation Efficiency, Contrast and Sensitivity in Electron and Ion Lithography....Pages 440-443
Back Matter....Pages 444-448